PART |
Description |
Maker |
NTK3134N NTK3134NT1G NTK3134NT5G |
Power MOSFET(功率MOSFET) 功率MOSFET(功率MOSFET的) POWER MOSFET 20 V, 890 MA, SINGLE N−CHANNEL WITH ESD PROTECTION, SOT−723
|
ON Semiconductor
|
VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
M68701H 68701H |
From old datasheet system Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile Silicon MOS FET Power Amplifier / 890-960MHz 6W FM /Digital Mobile
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M67769A |
RF POWER MODULE 890-915MHz, 12.5V, 13W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CMM0335-AK-000T CMM0335 CMM0335-AK |
890 to 915 MHz 6V, 35 dBm, GSM Power Amplifier 89015兆赫6V的,35 dBm时的GSM功率放大 From old datasheet system
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] CELERITEK
|
0898CP15A035 |
890 MHz Directional Coupler
|
Johanson Technology Inc.
|
TSHF6410 TSHF641009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
0910-300M |
Bipolar/LDMOS Transistor 300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation ADPOW[Advanced Power Technology]
|
IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 175°C Operating Temperature
|
International Rectifier
|
IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET HEXFET? Power MOSFET HEXFET㈢ Power MOSFET 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A) HEXFET? Power MOSFET 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|